Nitride-based light emitters: From carrier localization and non-radiative recombination processes to quantum transport and device design
This project aims to provide insight into non-radiative and transport properties of InGaN-based heterostructures
Project Insights
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€759,011
Total Project Costs -
4 yr
Project Duration -
2018
Year Funded
Project Description
Ambient lighting is the single most wasteful component of domestic electricity use. InGaN-based LEDs are core components for efficient solid state lighting. Applied on a global scale, the replacement of conventional light sources with these emitters will result in enormous energy savings. However, III-N-based LEDs suffer from the efficiency "droop", describing the effect that the device efficiency reduces strongly with increased drive current. The origin of this effect is still under debate. The central aim of this project is to provide insight into non-radiative and transport properties of InGaN-based heterostructures and how this relates to the "droop“, using atomistic calculations and quantum-corrected continuum-based models with microscopically determined input parameters.
Project Details
Total Project Cost: €759,011
Funding Agency: Science Foundation Ireland (SFI)
Year Funded: 2018
Lead Organisation: Tyndall National Institute (TNI)