FET-EV: 3C-SiC FET Revolution For Highly Efficient and Extreme Fast EV Charging Solutions

Project Description

The advent of wide-bandgap (WBG) technologies like silicon carbide (SiC) has opened up previously unimagined possibilities for the implementation of high-efficiency power conversion systems, but the market penetration of these devices has been modest due to very high device production costs compared to silicon. However, WBG devices are essential to meet the rising need for high power density and high-efficiency power electronics converters in medium and high voltage applications. This project will enable the realisation of high-efficiency/low inductance switching circuits and reduced system form factors. This project seeks to overcome the cost and fast-charging barriers and bring about technical advancements, allowing quicker, more efficient, and more effective methods of charging an EV.